Positron states on surface and in defective surface layers of semiconductors-Reference-Cited by-同舟云学术

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Positron states on surface and in defective surface layers of semiconductors

Published:1979-07 Issue:7 Volume:22 Page:748-751
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Aref'ev K. P.,Prokop'ev E. P.,Aref'ev V. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00902892.pdf

Reference11 articles.

1. A. Gainotti and C. Ghezzi, Phys. Rev. Lett.,24, 349 (1970).

2. A. Gainotti and C. Ghezzi,C5, 779 (1972).

3. K. P. Arefiev (Arefev). A. S. Karetnikov, and S. A. Vorobiev (Vorob'ev). Appl. Phys.,8, 273 (1973).

4. E. P. Prokop'ev, Yu. N. Kuznetsov, and F. R. Khashimov, Foundations of Semiconductor Positronics [in Russian], Monograph Deposited with Central Scientific-Research Institute ?Electronics? (DÉ-2073).

5. A. A. Vorob'ev, K. P. Aref'ev, S. A. Vorob'ev, A. S. Karetnikov, E. P. Prokop'ev, Yu. N. Kuznetsov, and F. R. Khashimov, Fiz. Tekh. Poluprovodn.,11, 651 (1977).

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