Mössbauer studies with radioactive probes in semiconductors-Reference-Cited by-同舟云学术

Mössbauer studies with radioactive probes in semiconductors

Published:1994-12 Issue:1 Volume:84 Page:279-287
ISSN:0304-3834
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Langouche G.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02060675.pdf

Reference17 articles.

1. D.L. Williamson, L. Niesen, G. Weyer, R. Sielemann and G. Langouche,Hyperfine Interaction of Defects in Semiconductors, ed. G. Langouche (Elsevier, Amsterdam, 1992) Chap. 1.

2. G. Langouche,Mössbauer Spectroscopy Applied to Inorganic Chemistry, eds. G. Lang and F. Grandjean (Plenum, New York, 1989) Chap. 10.

3. A complete listing of the Mössbauer literature can be found in the monthly issues of the Mössbauer Effects Reference and Data Journal, and in the various subject-oriented compilations edited by the Mössbauer Effect Data Center, University of North Carolina, Asheville, USA.

4. D.V. Lang and R.A. Logan, Phys. Rev. Lett. 39(1977)634.

5. D.V. Lang, R.A. Logan and M. Jaros, Phys. Rev. B19(1979)1015.

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