Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/11666806_65.pdf
Reference6 articles.
1. Cassan, E., Dollfus, P., Galdin, S., Hesto, P.: Semiclassical and Wave-Mechanical Modeling of Charge Control and Direct Tunneling Leakage in MOS and H-MOS Devices with Ultrathin Oxides. IEEE Trans. Electron Devices 48(4), 715–721 (2001)
2. Dalla Serra, A., Abramo, A., Palestri, P., Selmi, L., Widdershoven, F.: Closedand Open-Boundary Models for Gate-Current Calculation in n-MOSFETs. IEEE Trans. Electron Devices 48(8), 1811–1815 (2001)
3. Fernando, C.L., Frensley, W.R.: An Efficient Method for the Numerical Evaluation of Resonant States. J. Appl. Phys. 76(5), 2881–2886 (1994)
4. Gehring, A., Selberherr, S.: On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices. In: Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, München, pp. 25–28 (2004)
5. Gildenblatt, G., Gelmont, B., Vatannia, S.: Resonant Behavior, Symmetry, and Singularity of the Transfer Matrix in Asymmetric Tunneling Structures. J. Appl. Phys. 77(12), 6327–6331 (1995)
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