A Model for Resonant Tunneling Bipolar Transistors
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-1-4020-6266-7_14.pdf
Reference9 articles.
1. L. L. Chang, L. Esaki, and R. Tsu, “Resonant Tunneling in Semiconductor Double Barriers” Appl. Phys. Lett., vol.24, p. 593, 1974.
2. H-J. Pan, S.C. Feng, W.C. Wang, K.W. Lin, K.H. Yu, C.Z. Wu, L.W. Laih, and W.C. Liu, “Investigation of an InGaP/GaAs resonant tunelling heterojunction bipolar transistor,” Solid State Electronics, No.45, pp.489-494, 2001.
3. S.Y. Cheng, J.H. Tsai, W.L. Chang, H.J. Pan, Y.H. Shie, and W.C. Liu, “Investigation of an InGaP/GaAs resonant tunneling transistor (RTT)”, Solid-State Electronics, Vol.43, pp.755-760, 1999.
4. J.H. Tsai, “Quantized Resonant Tunneling Phenomena of AlGaAs/InGaAs Heterojunction Bipolar Transistors”, Japanese Journal of Applied Physics, Vol.40, pp. 5865-5870, 2001.
5. R. Lacomb and F. Jain, “A self-consistant model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors”, Solid State Electronics, Vol.39, No. 11, pp 1621-1627, 1996.
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