Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices

Author:

Yu JunTing,Chen ShuMing,Chen JianJun,Huang PengCheng

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Reference29 articles.

1. Colinge J P. FinFETs and Other Multi-Gate Transistors. New York: Springer, 2008

2. Fossum J G, Trivedl V P. Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs. New York: Cambridge University Press, 2013

3. LaPedus M. Intel tips 22-nm tri-gate, but mobile is MIA. http://www.eetimes.com/electronics-news/4215729/Intel-to-use-trigate-transistors-at-22-nm

4. Ball D R, Alles M L, Schrimpf R D, et al. Comparing single event upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations. In: Proceedings of IEEE International SOI Conference. San Diego: IEEE, 2010

5. El-Mamouni F, Zhang E X, Pate N D, et al. Laser- and heavy ioninduced charge collection in bulk FinFETs. IEEE Trans Nucl Sci, 2011, 58: 2563–2569

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