Dependence of residual voltage ratio behavior of SnO2-based varistors on Nb2O5 addition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-011-4375-3.pdf
Reference14 articles.
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2. Chen Q H, He J L, Tan K X, et al. Influence of grain size on distribution of temperature and thermal stress in ZnO varistor ceramics. Sci China Ser E-Tech Sci, 2002, 45(4): 337–347
3. Liu J, Hu J, He J L, et al. Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3. Sci China Ser E-Tech Sci, 2009 52(12): 3668–3673
4. He J L, Hu J, Lin Y H. ZnO varistors with high voltage gradient and low leakage current by doping rare-earth oxide. Sci China Ser E-Tech Sci, 2008, 51(6): 693–701
5. Pianaro S A, Bueno P R, Longo E, et al. A new SnO2-based varistor system. J Mater Sci Lett, 1995, 14(10): 692–694
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