The off-state gate isolation technique to improve ASET tolerance in differential analog design
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-013-5343-x.pdf
Reference19 articles.
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3. Amusan O A, Witulski A F, Massengill L W, et al. Charge collection and charge sharing in a 130 nm CMOS technology. IEEE T Nucl Sci, 2006, 53(6): 3253–3258
4. Amusan O A, Massengill L W, Baze M P, et al. Single event upsets in deep submicrometer technologies due to charge sharing. IEEE T Deve Mater Reliab, 2008, 8(3): 582–589
5. Amusan O A, Massengill L W, Baze M P, et al. Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing. IEEE T Nucl Sci, 2007, 54(6): 2584–2589
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