Atomically thin InSe: A high mobility two-dimensional material
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/article/10.1007/s11431-016-9004-x/fulltext.html
Reference11 articles.
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3. Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotech, 2014, 9: 372–377
4. Yoon Y, Ganapathi K, Salahuddin S. How good can monolayer MoS2 transistors be? Nano Lett, 2011, 11: 3768–3773
5. Liu H, Neal A T, Zhu Z, et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano, 2014, 8: 4033–4041
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