Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening

Author:

Chen ShuMing,Chen JianJun,Chi YaQing,Liu FanYu,He YiBai

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Reference24 articles.

1. Stathis J H, Zafar S. The negative bias temperature instability in MOS devices: A review. Microelectron Reliab, 2006, 46: 270–286

2. Grasser T, Kaczer B, Goes W, et al. A two-stage model for negative bias temperature instability. Proc of the IRPS, Quebec, 2009. 1063–1068

3. Schroder D K. Negative bias temperature instability: What do we understand? Microelectron Reliab, 2007, 47: 841–852

4. Shivakumar P, Kistler M, Keckler S, et al. Modeling the effect of technology trends on the soft error rate of combinational logic. Proc of DSTN, Washington DC, 2002. 389–398

5. Liu B W, Chen S M, Liang B, et al. The effect of re-convergence on SER estimation in combinational circuits. IEEE Trans Nucl Sci, 2009, 56(6): 3122–3129

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