Author:
Jiang Bei,Ke ShanWu,Tao ZiPei,Jin YaoYao,Meng JiaHao,Song XingJuan,Xiao YongYue,Jiang Li,Wang JinZhao,Chen Yong,Li YueBin,Wen Xin,Ye Cong
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference32 articles.
1. Liu X, Nandi S K, Venkatachalam D K, et al. Finite element modeling of resistive switching in Nb2O5-based memory device. In: 2014 Conference on Optoelectronic and Microelectronic Materials & Devices. Perth, 2014. 280–282
2. Kundozerova T V, Grishin A M, Stefanovich G B, et al. Anodic Nb2O5 nonvolatile RRAM. IEEE Trans Electron Devices, 2012, 59: 1144–1148
3. Deswal S, Kumar A, Kumar A. Investigating unipolar switching in Niobium oxide resistive switches: Correlating quantized conductance and mechanism. AIP Adv, 2018, 8: 085014
4. Jeon D S, Dongale T D, Kim T G. Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current. J Alloys Compd, 2021, 884: 161041
5. Kwon O, Lee H, Kim S. Effects of oxygen flow rate on metal-to-insulator transition characteristics in NbOx-based selectors. Materials, 2022, 15: 8575
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献