Author:
Zhou ZaiFa,Huang QingAn,Li WeiHua,Lu Wei
Publisher
Springer Science and Business Media LLC
Reference21 articles.
1. Strojwas A J, Zhu Z R, Ciplickas D, et al. Layout manufacturability analysis using rigorous 3-D topography simulation. In: Proceedings of IEEE Symposium on Semiconductor Manufacturing, San Jose, 2001. 263–266
2. Cole D C, Barouch E, Conrad E D, et al. Using advanced simulation to aid microlithography development. Proc IEEE, 2001, 89(8): 1194–1213
3. Hagouel P I, Neureuther A R. Modeling of X-ray resists for high-resolution lithography. In: Proceedings of ACS Organic Coatings and Plastics Chemistry, Chicago, 1975. 198–202
4. Dill F H, Neureuther A R, Tuttle J A, et al. Modeling projection printing of positive photoresists. IEEE Trans Electr Dev, 1975, 22(7): 456–464
5. Scheckler E W, Tam N N, Pfau A K, et al. An efficient volume-removal algorithm for practical three-dimensional lithography simulation with experimental verification. IEEE Trans Comput Aided Design Integr Circ Syst, 1993, 12(9): 1345–1356