Hot-electron drift mobility in silicon between 77 °K and 300 °K-Reference-Cited by-同舟云学术

Hot-electron drift mobility in silicon between 77 °K and 300 °K

Published:1968-03 Issue:1 Volume:54 Page:169-175
ISSN:0369-3554
Container-title:Il Nuovo Cimento B Series 10
language:en
Short-container-title:Nuov Cim B

Author:

Costato M.,Scavo S.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

http://link.springer.com/content/pdf/10.1007/BF02711540.pdf

Reference13 articles.

1. A. Alberigi Quaranta, M. Martini, G. Ottaviani, G. Redaelli andG. Zanarini: reported at the conference «Semiconductor Nuclear Particle Detectors and Circuits» held at Gatlinburg on May 15–18, 1967;A. Alberigi Quaranta, M. Martini, G. Ottaviani, G. Redaelli andG. Zanarini:Solid State Comm.,5, 747 (1967);

2. A. Alberigi Quaranta, M. Martini, G. Ottaviani, G. Redaelli andG. Zanarini: accepted for publication inSolid State Electronics.

3. M. Costato andS. Scavo:Nuovo Cimento,52 B, 236 (1967).

4. W. A. Harrison:Phys. Rev.,104, 1281 (1956).

5. E. O. Kane:Phys. Rev.,159, 624 (1967).

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1. Empirical relations for electron mobility in silicon;International Journal of Electronics;1996-12

2. Electron-velocity saturation at a BJT collector junction under low-level conditions;IEEE Transactions on Electron Devices;1983-03

3. Drift and Diffusion of Free Excitons in Si;Physical Review Letters;1980-06-23

4. X-ray scattering from non-thermal phonons in n-type silicon after a hot-electron pulse;Journal of Physics C: Solid State Physics;1974-09-07

5. Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis inn-Type Silicon;Physical Review B;1973-12-15