On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon
Author:
Publisher
Elsevier BV
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-009-0119-1
Reference46 articles.
1. Lehmann V, Föll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J Electrochem Soc, 1990, 137: 653–659
2. Lehmann V. The physics of macropore formation in low doped N-type silicon. J Electrochem Soc, 1993, 140: 2836–2843
3. Lehmann V. The physics of macroporous silicon formation. Thin Solid Films, 1995, 255: 1–4
4. Lehmann V, Grüning U. The limits of macropore array fabrication. Thin Solid Films, 1997, 297: 13–17
5. Rifai M H A, Christophersen M, Ottow S, et al. Dependence of macropore formation in n-Si on potential, temperature, and doping. J Electrochem Soc, 2000, 147: 627–635
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