Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material-Reference-Cited by-同舟云学术

Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

Published:1996-01 Issue:1 Volume:25 Page:7-12
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Bagchi S.,Lee J. D.,Krause S. J.,Roitman P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666167.pdf

Reference11 articles.

1. D. Venables and K.S. Jones,Nuc. Inst. Meth. B74, 65 (1993).

2. J.D. Lee, J.C. Park, D. Venables, S. J. Krause and P. Roitman,Materials Synthesis and Processing Using Ion Beams, ed. R.J. Culbertson, O.W. Holland, Kevin S. Jones and K. Maex, Vol. 316 (Pittsburgh, PA: Mater. Res. Soc, 1994), p. 753.

3. J.D. Lee, J.C. Park, D. Venables, S.J. Krause and P. Roitman,Appl. Phys. Lett. 63, 3330 (1993).

4. D.K. Sadana, H.J. Hovel, J.L. Frecouf and S.F. Chu,Materials Synthesis and Processing Using Ion Beams, ed. R.J. Culbertson, O.W. Holland, Kevin S. Jones and K. Maex, Vol. 316 (Pittsburgh, PA: Mater. Res. Soc, 1994), p. 699.

5. S. Nakashima and K. Izumi,J. Mat. Res. 8, 523 (1993).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of implantation energy and dose on low-dose SIMOX structures;Applied Physics A;2005-11

2. Under bump metallurgy study for Pb-free bumping;Journal of Electronic Materials;2002-05

3. Novel approaches for low cost fabrication of SOI;Current Applied Physics;2001-08

4. Nature of Surface and Bulk Defect Induced by Low Dose Oxygen Implantation in Separation by Implanted Oxygen Wafers;Japanese Journal of Applied Physics;2001-04-15

5. The Effects of Surface Capping during Annealing on the Microstructure of Ultrathin SIMOX Materials;Journal of The Electrochemical Society;2001