1. T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, and S. Selberherr, “Two- Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method,” in Fourth Int. Conf, on Solid-State and Integrated-Circuit Technology(G. Baldwin, Z. Li, C. Tsai, and J. Zhang, eds.), (Beijing, China), pp. 589–591, 1995.
2. B. Neinhüs, P. Graf, S. Decker, and B. Meinerzhagen, “Examination of Transient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation,” in 27th European Solid-State Device Research Conference(H. Grünbacher, ed.), ( Stuttgart, Germany ), pp. 188 – 191, Editions Frontieres, 1997.