Modelling of Bipolar Device Phenomena
Author:
Publisher
Springer Vienna
Link
http://link.springer.com/content/pdf/10.1007/978-3-7091-9043-2_3
Reference47 articles.
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2. H. C. de Graaff, J. W. Slotboom, A. Schmitz: The Emitter Efficiency of Bipolar Transistors. Solid-State Electr. 20, 515 (1977).
3. H, Schaber et al: Process and Device Related Scaling Considerations for Polysilicon Emitter Bipolar Transistors. IEDM Techn. Digest 170 (1987).
4. R. Beaufroy, J. J. Sparkes: The Junction Transistor as a Charge-Controlled Device. Automat. Tel. Eng. J. 13, 310 (1957).
5. J. te Winkel: Past and Present of the Charge-Control Concept in the Characterization of the Bipolar Transistor. Adv. Electr. and Electr. Phys. 39, 253 (1975).
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