1. S. M. Sze: Physics of Semiconductor Devices. John Wiley & Sons, New York (1981).
2. E. H. Nicollian, J. R. Brews: MOS Physics and Technology. John Wiley & Sons, New York (1982).
3. Y. P. Tsividis: Operation and Modelling of the MOS Transistor. McGraw-Hill, New York (1987).
4. F. Stern, W. E. Howard: Properties of Semiconductor Surface Inversion Layers in Quantum Limit. Physical Reviews 163, 816–835 (1967).
5. J. A. Pals: Quantization Effects in Semiconductor Inversion and Accumulation Layers. Ph.D. Thesis, Eindhoven University of Technology (1972).