Some Fundamental Properties-Reference-Cited by-同舟云学术

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Some Fundamental Properties

Published:1984 Issue: Volume: Page:8-45
ISSN:
Container-title:Analysis and Simulation of Semiconductor Devices
language:
Short-container-title:

Author:

Selberherr Siegfried

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-8752-4_2.pdf

Reference96 articles.

1. Adler, M. S.: Accurate Calculations of the Forward Drop and Power Dissipation in Thyristors. IEEE Trans. Electron Devices ED-25, No. 1, 16–22 (1978).

2. Adler, M. S.: An Operational Method to Model Carrier Degeneracy and Band Gap Narrowing. Solid-State Electron. 26, No. 5, 387–396 (1983).

3. Ankri, D., Eastman, L. F.: GaAlAs-GaAs Ballistic Hetero-Junction Bipolar Transistor. Electronics Lett. 18, No. 17, 750–751 (1982).

4. Anselm, A. I.: Einführung in die Halbleitertheorie. Berlin: Akademie-Verlag 1964.

5. Antoniadis, D. A., Dutton, R. W.: Models for Computer Simulation of Complete IC Fabrication Process. IEEE J. Solid State Circuits SC-14, No. 2, 412–422 (1979).

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