1. Adachi, T., Yoshii, A., Sudo, T.: Two-Dimensional Semiconductor Analysis Using Finite-Element Method. IEEE Trans. Electron Devices ED-26, 1026–1031 (1979).
2. Adler, M. S.: Accurate Calculations of the Forward Drop and Power Dissipation in Thyristors. IEEE Trans. Electron Devices ED-25, No. 1, 16–22 (1978).
3. Adler, M. S.: A Method for Achieving and Choosing Variable Density Grids in Finite Difference Formulations and the Importance of Degeneracy and Band Gap Narrowing in Device Modeling. Proc. NASECODE I Conf., pp. 3–30. Dublin: Boole Press 1979.
4. Agajanian, A. H.: A Bibliography on Semiconductor Device Modeling. Solid-State Electron. 18, 917–929 (1975).
5. Antognetti, P., Antoniadis, D. A., Dutton, R. W., Oldham, W. G.: Process and Device Simulation for MOS-VLSI Circuits. The Hague: Martinus Nijhoff 1983.