Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs-Reference-Cited by-同舟云学术

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Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs

Published:2001 Issue: Volume: Page:78-81
ISSN:
Container-title:Simulation of Semiconductor Processes and Devices 2001
language:
Short-container-title:

Author:

Kaya S.,Brown A. R.,Asenov A.,Magot D.,LintonI T.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6244-6_18.pdf

Reference12 articles.

1. Stolk, P A et al., IEEE Trans. Elec. Dev., 45, 1960, (1998)

2. Asenov, A, IEEE Trans. Elec. Dey., 45, 2505, (1998)

3. Asenov, A and Kaya, S, Proc. SISPAD, Seattle, USA, 135, (2000)

4. Linton, T, Giles, M and Packan, P, Silicon Nanoelectr. Workshop, 82, (1998)

5. Linton, T, Yu, S and Shaheed, R, VLSI Design, in press.

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