Boundary Condition Models for Terminal Current Fluctuations-Reference-Cited by-同舟云学术

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Boundary Condition Models for Terminal Current Fluctuations

Published:2001 Issue: Volume: Page:152-155
ISSN:
Container-title:Simulation of Semiconductor Processes and Devices 2001
language:
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Author:

Nedjalkov M.,Grasser T.,Kosina H.,Selberherr S.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6244-6_34.pdf

Reference6 articles.

1. L. Varani, T. Kuhn, L. Reggiani, and Y. Perles, “Current and Number Fluctuations in Submicron n+nn+ Structures;’ Solid-State Electron, vol. 36, no. 2, pp. 251–261, 1993.

2. T. Gonzalez and D. Pardo, “Ensemble Monte Carlo with Poisson Solver for the Study of Current Fluctuations in Homogeneous GaAs Structures,” J.Appl.Phys.,vol. 73, no. 11, pp. 7453–7464, 1993.

3. J. Adams, T.Tang, and L. Kay, “Monte Carlo Simulation of Noise in GaAs Semiconductor Devices,” IEEE Trans.Electron Devices, vol. 41, no. 4, pp. 575–581,1994.

4. C. Korman and I. Mayergoyz, “Semiconductor Noise in the Framework of Semiclassical Transport:’ Physical Review B, vol. 54, no. 24, pp. 17620–17627, 1996.

5. A. Piazza, C. Korman, and A. Jardeh, “A Physics-Based Semiconductor Noise Model Suitable for Efficient Numerical Implementation,” IEEE Trans. Computer-Aided Design, vol. 18, no. 12, pp. 1730–1740, 1999.

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