Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F-Reference-Cited by-同舟云学术

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Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

Published:1993 Issue: Volume: Page:265-268
ISSN:
Container-title:Simulation of Semiconductor Devices and Processes
language:
Short-container-title:

Author:

Asenov A.,Reid D.,Barker J. R.,Cameron N.,Beaumont S. P.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6657-4_65.pdf

Reference7 articles.

1. P. H. Ladbroke, A. J. Hill and J. P. Bridge, J. Microwave and Millimeter-Wave Computer-Aided Eng. Vol. 3, pp. 37–60, 1993.

2. P. C. Chao, P. M. Smit, S. C. Plamaeteer, and J. C. M. Hwang, IEEE Trans. Electron Dev. Vol. ED-32, pp. 1042, 1985.

3. J.-R. Zhou, and D. K. Ferry, IEEE Trans. Electron Dev. Vol. 39, pp. 473–477, 1992.

4. I. C. Kizilyalli, M. Artaki, and A. Chandra, IEEE Trans. Electron Dev. Vol. 38, pp. 197–206, 1991.

5. H.-F. Chau, D. Pavlidis and K. Tomizava, IEEE Trans. Electron Dev. Vol. 38, pp. 213–221, 1991.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Basic of Pseudomorphic Hemts Technology and Numerical Simulation;Devices Based on Low-Dimensional Semiconductor Structures;1996

2. Fabrication and Simulation of 0.1 μm Pseudomorphic HEMTs;Fabrication, Properties and Applications of Low-Dimensional Semiconductors;1995

3. Finite Element Monte Carlo Simulation of Recess Gate FETs;Simulation of Semiconductor Devices and Processes;1995

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