A dynamic photoresponse model for a pinned photodiode in CMOS image sensors-Reference-Cited by-同舟云学术

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A dynamic photoresponse model for a pinned photodiode in CMOS image sensors

Published:2022-07 Issue:7 Volume:18 Page:419-424
ISSN:1673-1905
Container-title:Optoelectronics Letters
language:en
Short-container-title:Optoelectron. Lett.

Author:

Ao Jinghua,Gao Zhiyuan,Gao Jing,Xu Jiangtao

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11801-022-2012-y.pdf

Reference16 articles.

1. MARCELOT O, GOIFFON V, NALLET F, et al. Pinned photodiode CMOS image sensor TCAD simulation: in-depth analysis of in-pixel pinning voltage measurement for a diagnostic tool[J]. IEEE transactions on electron devices, 2017, 64(2): 455–462.

2. PRIYADARSHINI N, SARKAR M. A 2erms-temporal noise CMOS image sensor with in-pixel 1/f noise reduction and conversion gain modulation for low light imaging[J]. IEEE transactions on circuits and systems I: regular papers, 2021, 68(1): 185–195.

3. RIZZOLO S, GOIFFON V, ESTRIBEAU M, et al. Influence of pixel design on charge transfer performances in CMOS image sensors[J]. IEEE transactions on electron devices, 2018, 65(3): 1048–1055.

4. PELAMATTI A, BELLOIR J-M, MESSIEN C, et al. Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors[J]. IEEE transactions on electron devices, 2015, 62(4): 1200–1207.

5. ALAIBAKHSH H, KARAMI M A. A general compact pinned photodiode model capable of miniature PPD modeling[J]. IEEE transactions on electron devices, 2021, 68(6): 2785–2790.

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