Threshold control in VCSELs by proton implanted depth-Reference-Cited by-同舟云学术

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Threshold control in VCSELs by proton implanted depth

Published:2011-07 Issue:4 Volume:7 Page:263-265
ISSN:1673-1905
Container-title:Optoelectronics Letters
language:en
Short-container-title:Optoelectron. Lett.

Author:

Zhao Hong-dong,Sun Mei,Wang Wei,Ma Lian-xi,Liu Hui-li,Li Wen-chao,Liu Qi

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11801-011-9246-4.pdf

Reference13 articles.

1. M. Ortsiefer, M. Görblich, Y. Xu, E. Rönneberg, J. Rosskopf, R. Shau and M. C. Amann, IEEE Photonics Technology Letters 22, 15 (2010).

2. HU Yong-sheng, YE Shu-juan, WANG Zhen-fu, QIN Li and NING Yong-qiang, Optoelectronics Letters 6, 421 (2010).

3. Jianjun Gao, Journal of Lightwave Technology 28, 1332 (2010).

4. G. Verschaffelt, G. Craggs, M. L. F. Peeters, S. K. Mandre, H. Thienpont and I. Fischer, IEEE Journal of Quantum Electronics 45, 249 (2009).

5. P. O. Leisher, A. J. Danner, J. J. Raftery Jr, D. Siriani and K. D. Choquette, IEEE Journal of Quantum Electronics 42, 1091 (2006).

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