Design of GaAs/Al x Ga1−x As asymmetric quantum wells for THz-wave by difference frequency generation-Reference-Cited by-同舟云学术

Design of GaAs/Al x Ga1−x As asymmetric quantum wells for THz-wave by difference frequency generation

Published:2012-05 Issue:3 Volume:8 Page:229-232
ISSN:1673-1905
Container-title:Optoelectronics Letters
language:en
Short-container-title:Optoelectron. Lett.

Author:

Cao Xiao-long,Yao Jian-quan,Zhu Neng-nian,Xu De-gang

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11801-012-1156-6.pdf

Reference16 articles.

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4. M. Tonouchi, Nat. Photonics 197, 105 (2007).

5. Yao Jian-Quan, Wang Jing-Li, Zhong Kai, Wang Ran, Xu De-Gang, Ding Xin, Zhang Fan and Wang Peng, Journal of Optoelectronics · Laser 21, 1582 (2010). (in Chinese)

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