Analyses of HF/NH4F buffer-treated Si(111) surfaces using XPS, REM and SIMS-Reference-Cited by-同舟云学术

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Analyses of HF/NH4F buffer-treated Si(111) surfaces using XPS, REM and SIMS

Published:1996-03 Issue:3 Volume:62 Page:247-253
ISSN:0947-8396
Container-title:Applied Physics A Materials Science & Processing
language:en
Short-container-title:Appl. Phys. A

Author:

Ma Y.,Eades J. A.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01575089.pdf

Reference26 articles.

1. J.H. Matlock:ASTM Synaposium on Silicon Processing, San Jose (1982)

2. H. Otsuka, K. Watanabe, H.N. Shimura, H. Iwai: IEEE Trans. EDL-3, 1982 (1982)

3. W. Kern, D.A. Puotinen: RCA Rev.31, 187 (1970)

4. W. Kern: Semicond. Int.7, 94 (April 1984)

5. W. Kern: RCA Eng.28, 99 (1983)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphological and chemical optimization of ex situ NH4F (40%) conditioned Si(111)-(1×1):H;Applied Physics Letters;2008-08-11

2. Nature of germanium nanowire heteroepitaxy on silicon substrates;Journal of Applied Physics;2006-07-15

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