Modelling of transport phenomena and defects in crystal growth processes

Author:

Pendurti S.,Zhang H.,Prasad V.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference58 articles.

1. Alexander H 1986 Dislocations in covalent crystals. InDislocations in solids (ed), F R N Nabarro (Amsterdam: North-Holland) vol. 7, pp 113–234

2. Alexander H, Hansen P 1968 Dislocations in the diamond structure insolid state physics (eds) F Seitz, D Tumbull, H Ehrenretch (New York & London; Academic Press) vol 22, pp 28–158.

3. Anselmo A, Prasad V, Koziol, J, Gupta K P 1993 Numerical and experimental study of a solid pellet feed continuous Czocjruisk growth process for silicon single crystals.J. Cryst. Growth 131: 247–264.

4. Atherton, L Derhy J J, Brown R A 1987 Negative heat exchange in Czochralski growth.J. Cryst. Growth 84: 57–78.

5. Bardsley W, Frank F C, Green G, Hurle D T J 1974 Meniscus in Czochralski growth.J. Cryst. Growth 23: 341–344.

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