Fabrication and characterization of Mn-implanted GaN layers followed by annealing
Author:
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Physics and Astronomy (miscellaneous)
Link
http://link.springer.com/content/pdf/10.1007/s40094-020-00399-w.pdf
Reference21 articles.
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3. Ohno, H., Shen, A., Matsukura, F., et al.: (Ga, Mn)As: a new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69(3), 363–365 (1996)
4. Dietl, T.: A ten-year perspective on dilute magnetic semiconductors and oxides. Nat. Mater. 9(12), 965–974 (2010)
5. Lee, M., Lee, H., Song, K.M., Kim, J.: Investigation of forward tunneling characteristics of InGaN/GaN blue light-emitting diodes on freestanding GaN detached from a Si substrate. Nanomaterials 8(7), 543 (2018)
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