Observation and compositional studies of the metallic conducting filaments in the low-resistance state (ON-state) of SiO/V2O5 thin films used as memory elements-Reference-Cited by-同舟云学术

Observation and compositional studies of the metallic conducting filaments in the low-resistance state (ON-state) of SiO/V2O5 thin films used as memory elements

Published:1984-06 Issue:6 Volume:19 Page:1939-1946
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Al-Ramadhan F. A. S.,Hogarth C. A.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00550264.pdf

Reference26 articles.

1. H. Fritzsche, ?Electronic and Structural Properties of Amorphous Semiconductors?, Proceedings of the Thirteenth Session of the Scottish Universities Summer School in Physics, edited by P. G. le Comber and J. Mort (1972) p. 557.

2. J. F. Gibbons and W. E. Beadle, Solid-State Electron. 7 (1964) 785.

3. F. Argall, Electron. Lett. 2 (1966) 282.

4. P. F. Bongers and U. Enz, Phillips Res. Rept. 21 (1966) 387.

5. K. Van Steensel, F. Van De Burg and C. Kooy, ibid. 22 (1967) 170.

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