Annealing studies of Be-implanted GaAs0.6P0.4-Reference-Cited by-同舟云学术

Annealing studies of Be-implanted GaAs0.6P0.4

Published:1978-07 Issue:4 Volume:7 Page:547-558
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

McLevige W. V.,Vaidyanathan K. V.,Streetman B. G.,Comas J.,Plew L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655418.pdf

Reference30 articles.

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2. R. K. Ahrenkiel, F. Moser, T. J. Coburn, S. L. Lyu, K. V. Vaidyanathan, P. K. Chatterjee, W. V. McLevige, and B. G. Streetman,1976 IEDM Tech. Digest (IEEE, New York, 1976), p. 426.

3. A. A. Immorlica, Jr. and F. H. Eisen, Sixth Biennial Conference on Active Microwave Semiconductor Devices and Circuits, Cornell University, Ithaca, N.Y., August (1977).

4. F. J. Leonberger, J. P. Donnelly, and C. O. Bozler, Appl. Phys. Lett.28, 616 (1976).

5. E. E. Barrowcliff, L. O. Bubulac, D. T. Cheung, W. E. Tennant, and A. M. Andrews,1977 IEDM Tech. Digest (IEEE, New York, 1977), p. 559.

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