Machine learning-based analyses for total ionizing dose effects in bipolar junction transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://link.springer.com/content/pdf/10.1007/s41365-022-01107-w.pdf
Reference55 articles.
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2. X. Li, J. Yang, D.M. Fleetwood et al., Hydrogen soaking, displacement damage effects, and charge yield in gated lateral bipolar junction transistors. IEEE Trans. Nucl. Sci. 65, 1271–1276 (2018). https://doi.org/10.1109/TNS.2018.2837032
3. R.L. Pease, R.D. Schrimpf, D.M. Fleetwood, ELDRS in bipolar linear circuits: a review. IEEE Trans. Nucl. Sci. 56, 1894–1908 (2009). https://doi.org/10.1109/TNS.2008.2011485
4. D.M. Fleetwood, Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices. IEEE Trans. Nucl. Sci. 60, 1706–1730 (2013). https://doi.org/10.1109/TNS.2013.2259260
5. G.I. Zebrev, A.S. Petrov, R.G. Useinov et al., Simulation of bipolar transistor degradation at various dose rates and electrical modes for high dose conditions. IEEE Trans. Nucl. Sci. 61, 1785–1790 (2014). https://doi.org/10.1109/TNS.2014.2315672
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