Entwicklung monolithisch integrierter GaAs-Millimeterwellenschaltungen

Author:

Adelseck B.,Colquhoun A.,Schmegner K. E.,Schwab W.

Publisher

Springer Berlin Heidelberg

Reference9 articles.

1. Chu, A.; Courtney, W.E.; Sudbury, R.W.: “A 31 GHz monolithic GaAs mixer/preamplifier circuit for receiver applications”, IEE Transactions on Electron Devices, Vol. ED-28, No. 2, 1981, pp. 149–154.

2. Bauhahn, P. et al.: “94 GHz planar GaAs monolithic balanced mixer”, IEEE, 1984, Microwave and Millimeter-wave Monolithic Circuits Symposium, pp.70–73.

3. Barker, G.K.; Badawin, M.H.; Mun, J.: “60 GHz monolithic GaAs Front-End Circuit for Receiver Applications”, Electronics letters, 12th April 1984, Vol. 20, No. 8, pp. 334–336.

4. Bauhahn, P.; Contolatis, A.; Sokolov, Y.; Chao, G: “30 GHz monolithic balanced mixer using an ion-implanted FEt-compatible 3-inch GaAs wafer process technology”, IEEE 1986, Microwave and Millimeterwave Monolithic Circuits Symposium, pp. 45–49.

5. Jacomb-Hood, A.W. et al.: “30 GHZ + 60 GHZ MMIC-MICROSTRIP MIXERS”, GaAs IC-Symposium 1986, pp. 195–198.

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