Surface Preparation Techniques for SiC Wafers
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-18870-1_29.pdf
Reference59 articles.
1. H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara and H. Abe: J. Ceramic Society Japan 109, 602 (2001)
2. K. Li and T.W. Liao: J. of Mater. Processing Technology 57, 207 (1996)
3. A.A. Yasseen, C.A. Zorman and M. Mehregany: Journal of the Electrochemical Society 146 (1), 327, (1999)
4. Z. Zhu, V. Muratov and T. Fisher: Wear 225, 848 (1999)
5. T.C. Chandler, M.B. Lari and T.S. Sudarshan: Mater. Sci. Forum 338, 845 (2000)
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