Step-Bunching Instabilities of Vicinal Surfaces During Growth and Sublimation of Crystals – the Role of Electromigration of Adatoms
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Springer Berlin Heidelberg
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http://link.springer.com/content/pdf/10.1007/978-3-642-16510-8_12
Reference37 articles.
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3. N. Inoue, Y. Tanishiro, K. Yagi, UHV-REM study of changes in the step structures on clean (100) silicon surfaces by annealing. Jpn. J. Appl. Phys. 26, L293 (1987)
4. H. Kahata, K. Yagi, REM observation on conversion between single domain surfaces of Si(001) 2 × 1 and 1 × 2 induced by specimen heating current. Jpn. J. Appl. Phys. 28, L858 (1989)
5. S. Stoyanov, Heating current induced conversion between 2 × 1 and 1 × 2 domains at vicinal (001) Si surfaces – can it be explained by electromigration of Si Adatoms? Jpn. J. Appl. Phys. 29, L659 (1990)
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1. Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation;Physical Review B;2012-11-29
2. Non-conserved dynamics of steps on vicinal surfaces during electromigration-induced step bunching;The European Physical Journal B;2012-02
3. Critical field behavior and antiband instability under controlled surface electromigration on Si(111);Physical Review B;2011-08-09
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