Physics and Applications of Amorphous Silicon Carbide-Reference-Cited by-同舟云学术

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Physics and Applications of Amorphous Silicon Carbide

Published:1989 Issue: Volume: Page:164-170
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
Short-container-title:

Author:

Hamakawa Y.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-75048-9_35.pdf

Reference22 articles.

1. Y. Hamakawa and Y. Tawada: Intern. J. Solar Energy 1 (1982) 251.

2. Y. Tawada, M. Kondo, H. Okamoto and Y. Hamakawa: Solar Energy Mat. 6 (1982) 299.

3. S.R. Ovshinsky: Materials Research Soc. 1985 Spring Meeting, San Francisco (1985) 251.

4. S. Tsuda, H. Tarui, T. Matsuyama, H. Haku, K. Watanabe, Y. Nakashima, S. Nakano and Y. Kuwano: Proc. 2nd Intern. Photovoltaic Science and Engineering Conf., Beijing, China (1986) 409.

5. For example, JARECT vol. 6, ed. by Y. Hamakawa ( Ohm-Sha & North-Holland, Tokyo, 1983 ) p. 252.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cells;Journal of Non-Crystalline Solids;2004-06

2. Doping of a-SiCX:H films including μc-Si:H by hot-wire CVD and their application as a wide gap window for heterojunction solar cells;Solar Energy Materials and Solar Cells;2002-10

3. Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures;IEE Proceedings G Circuits, Devices and Systems;1993

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