Inverse Doping Profile of MOSFETs via Geometric Programming
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-22453-9_37.pdf
Reference8 articles.
1. Sze, S.M.: Physics of Semiconductor Device, 2nd edn., Wiley, New York (1981)
2. Djomehri, I.J., Antoniadis, D.A.: Inverse Modeling of Sub-100 nm MOSFETs Using I-V and C-V. IEEE Trans. Electron Dev. 49, 568–575 (2002)
3. Li. Y., Yu, S.M.: A coupled-simulation-and-optimization approach to nanodevice fabrication with minimization of electrical characteristics fluctuation. IEEE Trans. Semiconductor Manufacturing 20, 432–438 (2007)
4. Leitao, A., Markowich, P.A., Zubelli, J.P.: On inverse doping profile problems for the stationary voltage-current map. Inverse Problems 22, 1071–1088 (2006)
5. Lahaye, D.J.P., Drago, C.R.: Exploiting model hierarchy in semiconductor design using manifold mapping. In: Roos, J., Costa, L. (eds.) Scientific Computing in Electrical Engineering SCEE 2008, vol. 20, pp. 445–452 (2010)
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