Publisher
Springer Berlin Heidelberg
Reference144 articles.
1. A. Uhlir Jr.: Electrolytic shaping of germanium and silicon, Bell Syst. Tech. J. 35, 333–347 (1956)
2. Y. Watanabe, T. Sakai: Application of a thick anode film to semiconductor devices, Rev. Electron. Commun. Lab. 19, 899 (1971)
3. K. Imai, H. Unno: FIPOS (full isolation by porous oxidized silicon) technology and its application to LSIʼs, IEEE T. Electron Devices 31, 297–302 (1984)
4. T. Unagami: Formation mechanism of porous silicon layer by anodization in HF solution, J. Electrochem. Soc. 127, 476–483 (1980)
5. G. Bomchil, R. Herino, K. Barla, J.C. Pfister: Pore-size distribution in porous silicon studied by absorption isotherm, J. Electrochem. Soc. 130, 1611–1614 (1983)