Static Induction Phototransistor (SIPI) and Ultrasensitive Lightsensor (Hybrid ICs) Using a Sipt

Author:

Nakajima Tetsuya,Oshitari Hiroshi,Nishizawa Jun-ichi

Publisher

Springer Berlin Heidelberg

Reference5 articles.

1. J. Nishizawa, in Proceedings of the 11th International Conference Solid State Decies, Tokyo, 1979; Japan. J. Appl. Phys. 19-1 (1980) pp 3–11

2. J.-I. Nishizawa, K-I. Nonaka, T. Tamamushi “Current amplification in non-homogeneous-base structure and static induction transistor structur”. J. Appl. Phys. 57(10), 15 May, 1985

3. J.-I. Nishizawa, T. Tamamushi, K.-I. Nonaka and S. Suzuki “A Very High Gain and a Wide Dynamic Range Static Induction Phototransistor” IEEE, Electron Devices Lett. ED-6, No. 1, January 1985

4. Yoshi Nakamura, Hiroshi Tadano, Susumu Sugiyama, Isemi Igarashi and Jun-ichi Nishizawa “Characteristic of high speed and low loss bipolar mode SIT (BSIT)” LECE, paper of technical group, TRED. ED83-3, April, 1983

5. Hiroshi Oshitari and Tetsuya Nakashima, “Temperature characteristics of Optical Hybrid IC using SIPT” National Convention Record. LEICE 2–31, March 1987

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