IMW
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-41714-6_90520
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16
2. A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16
3. DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16
4. High Performance HfLaO-based TiO2-Channel FE V-NAND with High Consistency and Low Operation Voltage;2024 IEEE Silicon Nanoelectronics Workshop (SNW);2024-06-15
5. A Novel 2-Tier Stacked Vertical Channel GAA Transistor Architecture with Area-Saving 3-Dimensional Local Interconnect to Achieve Gb-Density 6T SRAM with Acceptable Low Standby Chip Leakage (~1mA);2024 IEEE Silicon Nanoelectronics Workshop (SNW);2024-06-15
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