Constrictions in the Split Dislocations as a Tool to Study Dislocation Gettering Activity in Silicon-Reference-Cited by-同舟云学术

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Constrictions in the Split Dislocations as a Tool to Study Dislocation Gettering Activity in Silicon

Published:1991 Issue: Volume: Page:242-247
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
Short-container-title:

Author:

Farber B. Ya.,Gottschalk H.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-76385-4_34.pdf

Reference11 articles.

1. G. Packeiser, P.Haasen Phil. Mag. 35 , 821 1977

2. G. Packeiser, Phil.Mag. 41 , 459 1980

3. J.Tillman, Diploma thesis (Univ. Köln 1976)

4. P. Haasen, J. de Phys. 40 , C6–111 1979

5. N.Hiller: Diploma thesis (Univ. Köln, 1989)

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1. Dislocations;Materials Science and Technology;2013-02-15

2. Defect states in Si containing dislocation nets;Physica Status Solidi (a);1994-12-16

3. The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates;MRS Proceedings;1994

4. Constricted dislocations and their use for TEM measurements of the velocities of edge and 60° dislocations in silicon. A new approach to the problem of kink migration;Physica Status Solidi (a);1993-08-16

5. Microplasticity during High Temperature Indentation and the Peierls Potential in Sapphire (α-Al2O3) Single Crystals;Physica Status Solidi (a);1993-06-16

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