Computer Modelling of Grain Boundaries by Use of Interatomic Potentials-Reference-Cited by-同舟云学术

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Computer Modelling of Grain Boundaries by Use of Interatomic Potentials

Published:1989 Issue: Volume: Page:25-33
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
Short-container-title:

Author:

Teichler H.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-93413-1_4

Reference35 articles.

1. A.Bourret: this conference

2. A. Schulz: Diploma Thesis, Univ. Göttingen, 1982

3. H.J. Möller and H.H. Singer: In Polycrystalline Semiconductors, ed. by G. Harbeke, Springer Ser. Solid-State Sci., Vol 57 (Springer, Berlin and Heidelberg 1985) p. 18

4. A. Mauger, J.C. Bourgoin, G. Allan, M. Lannoo, A. Bourret, and L. Billard: Phys. Rev. B 35. 1267 (1987)

5. M. Kohyama, R. Yamamoto, and M. Doyama: phys.stat.sol.(b) 138, 387 (1986)

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1. Grain Boundaries in Semiconductors;Materials Science and Technology;2013-02-15

2. Dislocations;Materials Science and Technology;2013-02-15

3. Atomistic Modeling of Misfit Dislocations for Ge/(001)Si and Ge/(111)Si;physica status solidi (a);1999-01

4. Interatomic Potential for Condensed Phases and Bulk Defects in Silicon;MRS Proceedings;1997

5. Density functional calculations for stacking faults and grain boundaries in silicon;Physica Status Solidi (a);1993-08-16

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