Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method-Reference-Cited by-同舟云学术

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Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method

Published:1989 Issue: Volume: Page:219-224
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
Short-container-title:

Author:

Lindner R.,Hofmann-Tikkanen R.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-93413-1_30.pdf

Reference7 articles.

1. H. Ohashi, J. Ohusca, T. Tsukakoslu and M. Simbo:. Abstract IEDM 86, 210 (1986)

2. M. Shimbo, K. Furukawa, K. Fukud and K. Tanzawa: Appl. Phys. 60, 2987 (1986)

3. J. B. Lasky: App. Phys. Lett 48, 78 (1986)

4. A. Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohasi and K. Furukawa: IEDM 86, 122 (1986)

5. R. Lindner, R. Helbig, V. Lehmann, R. Hofmann-Tikkanen and P. A. Glasow: E-MRS Meeting, Straßbourg June 1987, Vol. XVI, 373

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Electrical Characterization of Hot Pressed Grain Boundaries in Silicon by EBIC and TEM;Springer Proceedings in Physics;1991

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