1. Almgren, C.: The role of RF measurements in plasma etching. Semi-cond. Int. 20(8), 99–104 (1997)
2. Shabushnig, J., Demko, P.: Application of optical emission spectroscopy to semiconductor device fabrication. Amer. Lab. 16, 60–67 (1984)
3. Rietman, E.A., Frye, R.C., Lory, E.R., Harry, T.R.: Active neural network control of wafer attributes in a plasma etch process. Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), 1314–1316 (1993)
4. White, D.A., Goodlin, B.E., Gower, A.E., Boning, D.S., Chen, H., Sawin, H.H., Dalton, T.J.: Low open-area endpoint detection using a PCA-based T 2 statistic and Q statistic on optical emission spectroscopy measurements. IEEE Transactions on Semiconductor Manufacturing, 193 (May 2000)
5. Mundt, R.: Model based training of a neural network endpoint detector for plasma etch applications. In: Meyyapan, M., Economou, D.J., Butler, S.W. (eds.) Proc. Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, May 1995, pp. 178–188 (1995)