Surface States Induced by Ion Implantation-Reference-Cited by-同舟云学术

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Surface States Induced by Ion Implantation

Published:1971 Issue: Volume: Page:373-382
ISSN:
Container-title:Ion Implantation in Semiconductors
language:
Short-container-title:

Author:

Fahrner W.,Goetzberger A.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-80660-5_51.pdf

Reference17 articles.

1. Castagne, R.: C.R. Acad. Sc. Paris, t. 267, serie B, 866 (1968).

2. Kerr, D.R.: International Conference on Properties and Use of MIS-structures (1969) Grenoble.

3. Kuhn, M.: Electrochem. Soc. Meeting, New York, Recent News Paper 345.

4. Nicollian, E.H., Goetzberger, A.: BSTJ, 46, 1055 (1967).

5. Kuhn, M., Silversmith, D.J.: J. Electrochem. Soc. 118, n6, 966 (1971).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation;Semiconducting Devices;1976

2. Si-SiO2 Interface States Induced by Implantation of Various Ion Species;Ion Implantation in Semiconductors and Other Materials;1973

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