1. See, for example, K. Tanimura, T. Tanaka and N. Itoh, Nucl. Instr. and Meth. B1, 187 (1984).
2. R.H. Haglund, Jr., and N.H. Tolk in: SPIE Technical Symposium on X-rays in Materials Analysis, San Diego, CA August 21–22, 1986.
3. M. Mendenhall, A. Barnes, P. Bunton, R. Haglund, L. Hudson, R. Rosenberg, D. Russell, J. Sarnthein, P. Savundararaj, N. Tolk, and J. Tellinghuisen, Chem. Phys. Lett, (in press).
4. J.P. Mitchell and D.G. Denure, Solid-State Electronics, 16, 825 (1973).
5. G.N. Greaves, in: The Physics of SiO2 and its Interfaces, ed., S.T. Pentelides, ( Pergamon Press, New York, 1978 ) p. 268.