Publisher
Springer Berlin Heidelberg
Reference28 articles.
1. D. Botez, W. T. Tsang, S. Wang: Growth characteristics of GaAs-Ga1-xAlxAs structures fabricated by liquid-phase epitaxy over preferentially etched channels. Appl. Phys. Lett. 28, 234–237 (1976)
2. S. Yamamoto, H. Hayashi, S. Yano, T. Sakurai, T. Hijikata: Visible GaA1As V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrate. Appl. Phys. Lett. 40, 372–374 (1982)
3. G. A. Evans, J. K. Butler, V. J. Masin: Lateral optical confinement of channeled-substrate-planar lasers with GaAs/A1GaAs substrates. IEEE J. QE-24, 737–749 (1988)
4. N. W. Carlson, J. C. Connolly: Coherent high-power phased array laser, semiconductor (CHIPPALS): Final Report WRDC-TR-89–5040, Wright Research and Development Center Electronic Technology Laboratory (September 1989)
5. W. W. Chow: Effects of spatial variation in and index-guided semiconductor laser array. J. Opt. Soc. Am. B 4, 324–328 (1987)