Author:
Winstel Günter,Weyrich Claus
Publisher
Springer Berlin Heidelberg
Reference19 articles.
1. Sze, S.M.: Physics of Semiconductors Devices. New York, London: J. Wiley and Sons 1969
2. Henry, C.H.; Logan, R.A.; Merritt, F.R.: Origin of n 2 Injection Current in Al„Gai1-xAs Heterojunctions. Appl. Phys. Lett. 31 (1977) 454–456
3. Ralston, J.M.: Detailed Light-Current-Voltage Analysis of GaP Electroluminescent Diodes. J. Appl. Phys. 44 (1973) 2635–2641
4. Archer, R.J.: Materials for Light Emitting Diodes. J. Electron. Mat. (1972) 128–154
5. Campbell, J.C.; Holonyak, N. Jr.; Craford, M.G.; Keune, D.L.: Band Structure Enhancement and Optimization of Radiative Recombination in GaAs1-xPx: N (and In1-xGaxP: N). J. Appl. Phys. 45 (1974) 4543–4553