The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF00914916.pdf
Reference34 articles.
1. P.Petroff, R.L.Hartman: Appl. Phys. Lett.23, 469 (1973)
2. P.W.Hutchinson, P.S.Dobson: Philos. Mag.32, 745 (1975)
3. J.Matsui, K.Ishida, Y.Nannichi: Jpn. J. Appl. Phys.14, 1555 (1975)
4. L.C.Kimerling: Solid-State Electron21, 1319 (1978)
5. P.W.Hutchinson, P.S.Dobson, B.Wakefield, S.O'Hara: Solid-State Electron.21, 1413 (1978)
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