1. Hadi HA, Abood TH, Mohi AT, Karim MS (2017) Impact of the etching time and current density on capacitance-voltage characteristics of P-type of porous silicon. World Sci News 67(2):149–160
2. Hussein MJ, Yunus WMM, Kamari HM, Zakaria A, Oleiw HF (2016) Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon. Opt Quant Electron 48(194):2–8
3. Suhaimi MHF, Rusop M, Abdullah S (2013) Porosity and thickness effect of porous silicon layer on photoluminescence spectra. Int Conf Technol, Inf, Manag, Eng Environ
4. Mortezaali A, Sani SR, Jooni FJ (2009) Correlation between porosity of porous silicon and optoelectronic properties. 1 (3):293–299
5. Kim SJ, Jeon BH, Choi KS, Min NK (2000) Capacitive porous silicon sensors for measurement of low alcohol gas concentration at room temperature. J Solid State Electrochem 4:363–366