Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process

Published:2011-06-17 Issue:11 Volume:13 Page:5999-6004
ISSN:1388-0764
Container-title:Journal of Nanoparticle Research
language:en
Short-container-title:J Nanopart Res

Author:

Mohiddon M. A.,Lakshun Naidu K.,Ghanashyam Krishna M.,Dalba G.,Rocca F.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Modelling and Simulation,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://link.springer.com/content/pdf/10.1007/s11051-011-0444-6.pdf

Reference14 articles.

1. Choi JH, Cheon JH, Kim SK, Jang J (2005) Giant-grain silicon (GGS) and its application to stable thin-film transistor. Displays 26:137–142

2. Ferri FA, Zanatta AR, Chambouleyron I (2006) Metal induced nanocrystalline structure in Ni containing amorphous Silicon thin films. J Appl Phys 100:94311–94317

3. Grisenti R, Dalba G, Fornasini P, Rocca F, Koppolu UMK, Krishna MG (2008) XAFS study of Ni surroundings in metal induced crystallization of thin film amorphous silicon. Solid State Commun 147:401–404

4. James SI, Sposili RS, Crowder MA (1997) Single-crystal Si films for thin-film transistor devices. Appl Phys Lett 70:3434–3436

5. Jin Z, Moulding K, Kwok HS, Wong M (1999) The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films. IEEE Trans Electron Devices 46:78–82

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing;Silicon;2024-05-11

2. Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing;2023-01-30

3. Investigation of crystallographic changes across the Cr/a-Si interface by X-ray absorption spectroscopy;Applied Surface Science;2022-08

4. Probing of the influence of bilayer geometry, substrate temperature and post-deposition annealing on Si and Cr thin film interdiffusion through Raman spectroscopy;B MATER SCI;2022

5. Perspectives on metal induced crystallization of a-Si and a-Ge thin films;RSC Advances;2022

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3